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| Place of Origin | Call |
| Brand Name | onsemi |
| Certification | ROHS |
| Model Number | FDC5614P |
The FDC5614P is a -60V P-channel logic level PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or it can minimize the undesirable voltage spikes. This product is general usage and suitable for many different applications.
• –3 A, –60 V. RDS(ON) = 0.105 Ω @ VGS = –10 V RDS(ON) = 0.135 Ω @ VGS = –4.5 V
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• DC-DC converters
• Load switch
• Power management
| Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | FETs - Single |
| Packaging | Reel |
| Part-Aliases | FDC5614P_NL |
| Unit-Weight | 0.001270 oz |
| Mounting-Style | SMD/SMT |
| Package-Case | SSOT-6 |
| Technology | Si |
| Number-of-Channels | 1 Channel |
| Configuration | Single Quad Drain |
| Transistor-Type | 1 P-Channel |
| Pd-Power-Dissipation | 1.6 W |
| Maximum Operating Temperature | + 150 C |
| Operating temperature range | - 55 C |
| Fall-Time | 10 ns |
| Rise-Time | 10 ns |
| Vgs-Gate-Source-Voltage | 20 V |
| ID (drain current) | 3 A |
| Vds-Drain-Source-Breakdown-Voltage | - 60 V |
| Rds-On-Drain-Source-Resistance | 105 mOhms |
| Transistor-Polarity | P-Channel |
| Typical-Turn-Off-Delay-Time | 19 ns |
| Turn-On Delay Time | 7 ns |
| Transconductance | 8 S |
| Channel-Mode | Enhancement |
| FDC5614P_NF073 | Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC5614P vs FDC5614P_NF073 |
| FDC5614P | P-Channel PowerTrenchR MOSFET, Logic Level, 60V -3A, 105mΩ, 3000-REEL | ON Semiconductor | FDC5614P vs FDC5614P |
| FDC5614P_NL | Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC5614P vs FDC5614P_NL |
| FDC5614PT/R_NL | Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC5614P vs FDC5614PT/R_NL |
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FAQ
Q: Are you trading company or manufacturer?
A: We are original manufacturer OF Integrated Circuit Chip . We can do OEM/ODM business.
Q: How long is your delivery time?
A: Group buying delivery time: 30-60 days; General delivery time: 20 days.
Q: What is your terms of payment?
A: T/T 30% as deposit, and 70% before delivery.
Q: How to buy your products?
A: You can buy the products from our company directly.Normally the procedure is sign the contract, payment by T/T,Contact the shipping company to delivery the goods to your country.
Q: What is the warranty ?
A: The free warranty is one year from the day of Commissioning qualified.If there is any fault for our products within the free warranty period, we will repair it and change the fault assembly for free.
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