IPW65R110CFDA Datasheet
Product Details
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
• Ultra-fast body diode
• Very high commutation ruggedness
• Extremely low losses due to very low FOM Rdson^Qg and Eoss
• Easy to use/drive
• Qualified according to AEC Q101
• Green package (RoHS compliant), Pb-free plating, halogen free for mold
compound
650V CoolMOS CFDA is designed for switching applications.
Specifications
Attribute | Attribute Value |
---|---|
Manufacturer | Infineon |
Product Category | Transistors - FETs, MOSFETs - Single |
Series | XPW65R110 |
Packaging | Tube |
Part-Aliases | IPW65R110CFDAFKSA1 IPW65R110CFDAXK SP000895236 |
Unit-Weight | 1.340411 oz |
Mounting-Style | Through Hole |
Package-Case | TO-247-3 |
Technology | Si |
Number-of-Channels | 1 Channel |
Configuration | Single |
Transistor-Type | 1 N-Channel |
Pd-Power-Dissipation | 277.8 W |
Maximum Operating Temperature | + 150 C |
Operating temperature range | - 55 C |
Fall-Time | 6 ns |
Rise-Time | 11 ns |
Vgs-Gate-Source-Voltage | +/- 20 V |
ID (drain current) | 31.2 A |
Vds-Drain-Source-Breakdown-Voltage | 650 V |
Vgs-th-Gate-Source-Threshold-Voltage | 4 V |
Rds-On-Drain-Source-Resistance | 99 mOhms |
Transistor-Polarity | N-Channel |
Typical-Turn-Off-Delay-Time | 68 ns |
Turn-On Delay Time | 16 ns |
Qg-Gate-Charge | 118 nC |
Transconductance | - |
Channel-Mode | Enhancement |
Descriptions
MOSFET N-Ch 650V 31.2A TO247-3
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