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IPW65R110CFDA Transistors MOSFET N-Ch 650V 31.2A TO247-3
  • IPW65R110CFDA Transistors MOSFET N-Ch 650V 31.2A TO247-3

IPW65R110CFDA Transistors MOSFET N-Ch 650V 31.2A TO247-3

Place of Origin Call
Brand Name Infineon
Certification ROHS
Model Number IPW65R110CFDA
Product Details
Product Name:
IPW65R110CFDA
Condition:
Original 100%
Installation Methodpe:
MOSFET N-Ch 650V 31.2A TO247-3
Package:
PG-TO247-3
Voltage - Supply:
International Standard
Max. Reverse Current:
International Standard
Application:
Transistors - FETs, MOSFETs - Single
Product Description

                                                                  IPW65R110CFDA Transistors MOSFET N-Ch 650V 31.2A TO247-3 0IPW65R110CFDA Datasheet
Product Details

Description

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.

Features

• Ultra-fast body diode
• Very high commutation ruggedness
• Extremely low losses due to very low FOM Rdson^Qg and Eoss
• Easy to use/drive
• Qualified according to AEC Q101
• Green package (RoHS compliant), Pb-free plating, halogen free for mold
compound

 

Applications

650V CoolMOS CFDA is designed for switching applications.

Specifications

Attribute Attribute Value
Manufacturer Infineon
Product Category Transistors - FETs, MOSFETs - Single
Series XPW65R110
Packaging  Tube
Part-Aliases IPW65R110CFDAFKSA1 IPW65R110CFDAXK SP000895236
Unit-Weight  1.340411 oz
Mounting-Style Through Hole
Package-Case TO-247-3
Technology  Si
Number-of-Channels 1 Channel
Configuration Single
Transistor-Type 1 N-Channel
Pd-Power-Dissipation  277.8 W
Maximum Operating Temperature  + 150 C
Operating temperature range - 55 C
Fall-Time  6 ns
Rise-Time  11 ns
Vgs-Gate-Source-Voltage  +/- 20 V
ID (drain current)  31.2 A
Vds-Drain-Source-Breakdown-Voltage  650 V
Vgs-th-Gate-Source-Threshold-Voltage 4 V
Rds-On-Drain-Source-Resistance  99 mOhms
Transistor-Polarity N-Channel
Typical-Turn-Off-Delay-Time 68 ns
Turn-On Delay Time  16 ns
Qg-Gate-Charge  118 nC
Transconductance  -
Channel-Mode  Enhancement
 

Descriptions

MOSFET N-Ch 650V 31.2A TO247-3

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A: We are original manufacturer OF Integrated Circuit Chip . We can do OEM/ODM business.
Q: How long is your delivery time?
A: Group buying delivery time: 30-60 days; General delivery time: 20 days.
Q: What is your terms of payment?
A: T/T 30% as deposit, and 70% before delivery.
Q: How to buy your products?
A: You can buy the products from our company directly.Normally the procedure is sign the contract, payment by T/T,Contact the shipping company to delivery the goods to your country.
Q: What is the warranty ?
A: The free warranty is one year from the day of Commissioning qualified.If there is any fault for our products within the free warranty period, we will repair it and change the fault assembly for free.

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