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FDN304PZ Transistors MOSFET P-Ch PowerTrench Specified 1.8V
  • FDN304PZ Transistors MOSFET P-Ch PowerTrench Specified 1.8V
  • FDN304PZ Transistors MOSFET P-Ch PowerTrench Specified 1.8V

FDN304PZ Transistors MOSFET P-Ch PowerTrench Specified 1.8V

Place of Origin Call
Brand Name onsemi
Certification ROHS
Model Number FDN304PZ
Product Details
Product Name:
FDN304PZ
Condition:
Original 100%
Installation Methodpe:
MOSFET 2.4 A SMD/SMT 1 Channel - 55 C TO-236-3, SC-59, SOT-23-3 500 MW P-Channel - 20 V
Package:
TO-236-3, SC-59, SOT-23-3
Voltage - Supply:
International Standard
Max. Reverse Current:
International Standard
Application:
FETs - Single
Product Description

                                                                  FDN304PZ Transistors MOSFET P-Ch PowerTrench Specified 1.8V 0FDN304PZ Datasheet
Product Details

General Description

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Features

· –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V
RDS(ON) = 70 mW @ VGS = –2.5 V
RDS(ON) = 100 mW @ VGS = –1.8 V
· Fast switching speed
· ESD protection diode
· High performance trench technology for extremely low RDS(ON)
· SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint

Applications

· Battery management
· Load switch
· Battery protection

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Specifications

Attribute Attribute Value
Manufacturer onsemi
Product Category FETs - Single
Series PowerTrench®
Packaging  Alternate Packaging
Part-Aliases  FDN304PZ_NL
Unit-Weight  0.001058 oz
Mounting-Style SMD/SMT
Package-Case TO-236-3, SC-59, SOT-23-3
Technology  Si
Operating-Temperature  -55°C ~ 150°C (TJ)
Mounting-Type Surface Mount
Number-of-Channels 1 Channel
Supplier-Device-Package SuperSOT-3
Configuration Single
FET-Type  MOSFET P-Channel, Metal Oxide
Power-Max 460mW
Transistor-Type 1 P-Channel
VDSS – Drain-Source Voltage 20V
Input Capacitance 1310pF @ 10V
FET-Feature  Logic Level Gate, 1.8V Drive
Current-Continuous-Drain-Id-25°C  2.4A (Ta)
Rds-On-Max-Id-Vgs 52 mOhm @ 2.4A, 4.5V
Vgs-th-Max-Id  1.5V @ 250μA
Gate-Charge-Qg-Vgs 20nC @ 4.5V
Pd-Power-Dissipation  500 mW
Maximum Operating Temperature  + 150 C
Operating temperature range  - 55 C
Fall-Time  15 ns
Rise-Time  15 ns
Vgs-Gate-Source-Voltage  8 V
ID (drain current)  2.4 A
Vds-Drain-Source-Breakdown-Voltage  - 20 V
Rds-On-Drain-Source-Resistance  52 mOhms
Transistor-Polarity P-Channel
Typical-Turn-Off-Delay-Time 40 ns
Turn-On Delay Time  15 ns
Transconductance  12 S
Channel-Mode Enhancement
 
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Descriptions

P-Channel 20V 2.4A (Ta) 500mW (Ta) Surface Mount SuperSOT-3
Trans MOSFET P-CH 20V 2.4A 3-Pin SuperSOT T/R
MOSFET P-Ch PowerTrench Specified 1.8V

 

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