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2N7000_D75Z N Channel Transistors MOSFET high cell density 60v 200ma
  • 2N7000_D75Z N Channel Transistors MOSFET high cell density 60v 200ma

2N7000_D75Z N Channel Transistors MOSFET high cell density 60v 200ma

Place of Origin Call
Brand Name onsemi
Certification ROHS
Model Number 2N7000_D75Z
Product Details
Product Name:
2N7000_D75Z
Condition:
Original 100%
Installation Methodpe:
MOSFET 21 A SMD/SMT 1 Channel - 55 C TO-252-3 28 W N-Channel 30 V
Package:
TO-252-3, DPak (2 Leads + Tab), SC-63
Voltage - Supply:
International Standard
Max. Reverse Current:
International Standard
Application:
Transistors -MOSFETs FETs - Single
High Light: 

N Channel Transistors MOSFET

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2N7000_D75Z Transistor MOSFET

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2N7000_D75Z N Channel MOSFET

Product Description

                                                                  2N7000_D75Z N Channel Transistors MOSFET high cell density 60v 200ma 02N7000_D75Z Datasheet
Product Details

Description

These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features

• High Density Cell Design for Low RDS(ON)
• Voltage Controlled Small Signal Switch
• Rugged and Reliable
• High Saturation Current Capability

Specifications

Attribute Attribute Value
Manufacturer Fairchild Semiconductor
Product Category FETs - Single
Packaging  Ammo Pack
Unit-Weight 0.007090 oz
Mounting-Style Through Hole
Package-Case TO-92-3
Technology  Si
Number-of-Channels 1 Channel
Configuration Single
Transistor-Type 1 N-Channel
Pd-Power-Dissipation  400 mW
Maximum Operating Temperature  + 150 C
Operating temperature range  - 55 C
Vgs-Gate-Source-Voltage  20 V
ID (drain current)  200 mA
Vds-Drain-Source-Breakdown-Voltage  60 V
Rds-On-Drain-Source-Resistance  1.2 Ohms
Transistor-Polarity N-Channel
Transconductance  0.1 S
Channel-Mode  Enhancement
 

Descriptions

MOSFET N-CHANNEL 60V 200mA

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FAQ
Q: Are you trading company or manufacturer?
A: We are original manufacturer OF Integrated Circuit Chip . We can do OEM/ODM business.
Q: How long is your delivery time?
A: Group buying delivery time: 30-60 days; General delivery time: 20 days.
Q: What is your terms of payment?
A: T/T 30% as deposit, and 70% before delivery.
Q: How to buy your products?
A: You can buy the products from our company directly.Normally the procedure is sign the contract, payment by T/T,Contact the shipping company to delivery the goods to your country.
Q: What is the warranty ?
A: The free warranty is one year from the day of Commissioning qualified.If there is any fault for our products within the free warranty period, we will repair it and change the fault assembly for free.

 
 

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