2N7000_D75Z Datasheet
Product Details
These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.
• High Density Cell Design for Low RDS(ON)
• Voltage Controlled Small Signal Switch
• Rugged and Reliable
• High Saturation Current Capability
Specifications
Attribute | Attribute Value |
---|---|
Manufacturer | Fairchild Semiconductor |
Product Category | FETs - Single |
Packaging | Ammo Pack |
Unit-Weight | 0.007090 oz |
Mounting-Style | Through Hole |
Package-Case | TO-92-3 |
Technology | Si |
Number-of-Channels | 1 Channel |
Configuration | Single |
Transistor-Type | 1 N-Channel |
Pd-Power-Dissipation | 400 mW |
Maximum Operating Temperature | + 150 C |
Operating temperature range | - 55 C |
Vgs-Gate-Source-Voltage | 20 V |
ID (drain current) | 200 mA |
Vds-Drain-Source-Breakdown-Voltage | 60 V |
Rds-On-Drain-Source-Resistance | 1.2 Ohms |
Transistor-Polarity | N-Channel |
Transconductance | 0.1 S |
Channel-Mode | Enhancement |
Descriptions
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