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| Place of Origin | Call |
| Brand Name | onsemi |
| Certification | ROHS |
| Model Number | MMBT3904LT1G |
The MMBT3904LT1G is a general-purpose NPN silicon bipolar transistor with linear and switching capabilities. It comes in the SOT-23 package, which is intended for low-power surface mount applications. The MMBT3904LT1G can be utilized in circuits that require high current density and a wide voltage range. The maximum emitter-base voltage of the MMBT3904LT1G is 6 V. It can dissipate up to 300 mW of power.
Package Type: SOT−23 (TO−236)
Transistor Type: NPN
Max Collector Current(IC): 200 mA
Max Collector-Emitter Voltage (VCEO): 40 V
Max Collector-Base Voltage (VCBO): 60 V
Max Emitter-Base Voltage (VEBO): 6 V
Max Power Dissipation (PD): 300 mW
Max Transition Frequency (fT): 300 MHz
DC Current Gain (hFE): 100 - 300
Storage & Operating temperature: -55 to +150 Centigrade
General Purpose Switching
Signal Processing
Industrial
Automotive
Specifications
| Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | Transistors (BJT) - Single |
| Manufacturer | ON Semiconductor |
| Product-Category | Bipolar Transistors - BJT |
| RoHS | Details |
| Brand | ON Semiconductor |
| Mounting-Style | SMD/SMT |
| Package-Case | SOT-23-3 |
| Transistor-Polarity | NPN |
| Configuration | Single |
| Collector-Emitter-Voltage-VCEO-Max | 40 V |
| Collector-Base-Voltage-VCBO | 60 V |
| Emitter-Base-Voltage-VEBO | 6 V |
| Collector-Emitter-Saturation-Voltage | 0.3 V |
| Maximum-DC-Collector-Current | 0.2 A |
| Gain-Bandwidth-Product-fT | 300 MHz |
| Maximum-Operating-Temperature | + 150 C |
| Series | MMBT3904L |
| Continuous-Collector-Current | 0.2 A |
| DC-Collector-Base-Gain-hfe-Min | 100 |
| Minimum-Operating-Temperature | - 55 C |
| Packaging | Reel |
| Pd-Power-Dissipation | 225 mW |
| Unit-Weight | 0.050717 oz |
| Manufacturer Part# | Description |
Manufacturer |
Compare |
| BSR17A | NPN General Purpose Amplifier, 3000-REEL | ON Semiconductor | MMBT3904LT1G vs BSR17A |
| MMBT3906LT3G | PNP Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL | ON Semiconductor | MMBT3904LT1G vs MMBT3906LT3G |
| MMBT3904 | Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Diotec Semiconductor AG | MMBT3904LT1G vs MMBT3904 |
| MMBT3906LT1 | Small Signal Bipolar Transistor, 0.2A I(C), PNP, | SynSemi Inc | MMBT3904LT1G vs MMBT3906LT1 |
| MMBT3904-7-F | Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3 | Diodes Incorporated | MMBT3904LT1G vs MMBT3904-7-F |
| MMBT3904-TP | Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Micro Commercial Components | MMBT3904LT1G vs MMBT3904-TP |
| MMBT3904LT3G | NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL | ON Semiconductor | MMBT3904LT1G vs MMBT3904LT3G |
| MMBT3906LT1G | PNP Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 3000-REEL | ON Semiconductor | MMBT3904LT1G vs MMBT3906LT1G |
| MMBT3904,215 | MMBT3904 - NPN switching transistor TO-236 3-Pin | Nexperia | MMBT3904LT1G vs MMBT3904,215 |
| SST3904T116 | Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SST3, 3 PIN | ROHM Semiconductor | MMBT3904LT1G vs SST3904T116 |
An NPN transistor is the most commonly used bipolar junction transistor and is constructed by sandwiching a P-type semiconductor between two N-type semiconductors. An NPN transistor has three terminals - a collector, emitter, and base. The NPN transistor behaves like two PN junctions diodes connected back to back.
The MMBT3904LT1G is an NPN silicon bipolar transistor designed for use in linear, lower power surface mount and switching applications.
'G' stands for 'green'. The MMBT3904LT1G transistor is the lead-free version of the MMBT3904LT1.
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