Specifications
Attribute | Attribute Value |
---|---|
Manufacturer | Micron Technology Inc. |
Product Category | Memory ICs |
Series | - |
Packaging | Tray |
Package-Case | 64-LBGA |
Operating-Temperature | -40°C ~ 85°C (TA) |
Interface | Parallel |
Voltage-Supply | 2.7 V ~ 3.6 V |
Supplier-Device-Package | 64-FBGA (11x13) |
Memory Capacity | 128M (16M x 8, 8M x 16) |
Memory-Type | FLASH - NOR |
Speed | 60ns |
Format-Memory | FLASH |
Functional compatible component
Product Details
Micron's 65nm device is the latest generation of StrataFlash® wireless memory featuring flexible, multiple-partition, dual-operation architecture. The device provides high performance, asynchronous read mode and synchronous-burst read mode using 1.8V low-voltage, multilevel cell (MLC) technology.
• High-Performance Read, Program and Erase
– 96 ns initial read access
– 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output
– 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output
– 8-, 16-, and continuous-word synchronous-burst Reads
– Programmable WAIT configuration
– Customer-configurable output driver impedance
– Buffered Programming: 2.0 μs/Word (typ), 512-Mbit 65 nm
– Block Erase: 0.9 s per block (typ)
– 20 μs (typ) program/erase suspend
• Architecture
– 16-bit wide data bus
– Multi-Level Cell Technology
– Symmetrically-Blocked Array Architecture
– 256-Kbyte Erase Blocks
– 1-Gbit device: Eight 128-Mbit partitions
– 512-Mbit device: Eight 64-Mbit partitions
– 256-Mbit device: Eight 32-Mbit partitions
– 128-Mbit device: Eight 16-Mbit partitions
– Read-While-Program and Read-While-Erase
– Status Register for partition/device status
– Blank Check feature
• Quality and Reliability
– Expanded temperature: –30 °C to +85 °C
– Minimum 100,000 erase cycles per block
– 65nm Process Technology
• Power
– Core voltage: 1.7 V - 2.0 V
– I/O voltage: 1.7 V - 2.0 V
– Standby current: 60 μA (typ) for 512-Mbit, 65 nm
– Deep Power-Down mode: 2 μA (typ)
– Automatic Power Savings mode
– 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz
• Software
– Micron® Flash data integrator (FDI) optimized
– Basic command set (BCS) and extended command set (ECS) compatible
– Common Flash interface (CFI) capable
• Security
– One-time programmable (OTP) space
64 unique factory device identifier bits
2112 user-programmable OTP bits
– Absolute write protection: VPP = GND
– Power-transition erase/program lockout
– Individual zero latency block locking
– Individual block lock-down
• Density and packaging
– 128Mb, 256Mb, 512Mbit, and 1-Gbit
– Address-data multiplexed and non-multiplexed interfaces
– 64-Ball Easy BGA
Device Descriptions
Who we are?
is a professional electronic marketing corporation entirely engaged in the fields of semi-conductors and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,diode,transistor,IGBT,DC-DC converter.....***has set up our own sales service conception and has already established strong partnerships with many famous manufacturers and we have more than 5,000,000 kinds of electronic components for your choices, always at your services !
FAQ
Q: Are you trading company or manufacturer?
A: We are original manufacturer OF Integrated Circuit Chip . We can do OEM/ODM business.
Q: How long is your delivery time?
A: Group buying delivery time: 30-60 days; General delivery time: 20 days.
Q: What is your terms of payment?
A: T/T 30% as deposit, and 70% before delivery.
Q: How to buy your products?
A: You can buy the products from our company directly.Normally the procedure is sign the contract, payment by T/T,Contact the shipping company to delivery the goods to your country.
Q: What is the warranty ?
A: The free warranty is one year from the day of Commissioning qualified.If there is any fault for our products within the free warranty period, we will repair it and change the fault assembly for free.
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