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Semiconductor X28HC64P-12 Memory ICs EEPROM 64KBIT Parallel 28DIP
  • Semiconductor X28HC64P-12 Memory ICs EEPROM 64KBIT Parallel 28DIP

Semiconductor X28HC64P-12 Memory ICs EEPROM 64KBIT Parallel 28DIP

Place of Origin Call
Brand Name Xicor
Certification ROHS
Model Number X28HC64P-12
Product Details
Product Name:
X28HC64P-12
Condition:
Original 100%
Installation Methodpe:
EEPROM 0°C ~ 70°C (TA) 28-PDIP 4.5 V ~ 5.5 V
Package:
28-DIP (0.600", 15.24mm)
Voltage - Supply:
International Standard
Max. Reverse Current:
International Standard
Application:
Memory ICs
High Light: 

X28HC64P-12

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EEPROM Memory ICs

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X28HC64P-12 Memory IC

Product Description

                                                                  Semiconductor X28HC64P-12 Memory ICs EEPROM 64KBIT Parallel 28DIP 0X28HC64P-12 Datasheet

Specifications

Attribute Attribute Value
Manufacturer Xicor
Product Category Memory ICs
Series -
Packaging  Tube
Package-Case 28-DIP (0.600", 15.24mm)
Operating-Temperature  0°C ~ 70°C (TA)
Interface Parallel
Voltage-Supply  4.5 V ~ 5.5 V
Supplier-Device-Package 28-PDIP
Memory Capacity 64K (8K x 8)
Memory-Type  EEPROM
Speed 120ns
Format-Memory EEPROMs - Parallel
 

Functional compatible component​

Product Details

DESCRIPTION

The X28HC64 is an 8K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28HC64 is a 5V only device. The X28HC64 features the JEDEC approved pinout for byte wide memories, compatible with industry standard RAMs.

 

 

FEATURES

• 55ns Access Time
• Simple Byte and Page Write
—Single 5V Supply
—No External High Voltages or VPP Control Circuits
—Self-Timed
—No Erase Before Write
—No Complex Programming Algorithms
—No Overerase Problem
• Low Power CMOS
—40 mA Active Current Max.
—200 µA Standby Current Max.
• Fast Write Cycle Times
—64 Byte Page Write Operation
—Byte or Page Write Cycle: 2ms Typical
—Complete Memory Rewrite: 0.25 sec. Typical
—Effective Byte Write Cycle Time: 32µs Typical
• Software Data Protection
• End of Write Detection
—DATA Polling
—Toggle Bit
• High Reliability
—Endurance: 100,000 Cycles
—Data Retention: 100 Years
• JEDEC Approved Byte-Wide Pinout

Descriptions

EEPROM Memory IC 64Kb (8K x 8) Parallel 120ns 28-PDIP

 
 

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