BD681G Datasheet
Product Details
Description: The BD681G is a NPN Darlington transistor with a maximum collector cut-off current of 200 uA. It is packaged in a TO-225AA through hole mounting style and has a maximum power rating of 40W. It has a minimum DC current gain hFE of 750 @ 1.5A, 3V and a transistor polarity of NPN.
Features:
• NPN Darlington configuration
• Maximum collector cut-off current of 200 uA
• Packaged in a TO-225AA through hole mounting style
• Maximum power rating of 40W
• Minimum DC current gain hFE of 750 @ 1.5A, 3V
• Transistor polarity of NPN
Applications:
The BD681G is suitable for use in a variety of applications such as audio amplifiers, power switching circuits, and motor control circuits. It can also be used in automotive and industrial applications.
Specifications
Attribute | Attribute Value |
---|---|
Manufacturer | onsemi |
Product Category | Transistors (BJT) - Single |
Series | BD681 |
Packaging | Bulk |
Mounting-Style | Through Hole |
Package-Case | TO-225AA, TO-126-3 |
Mounting-Type | Through Hole |
Supplier-Device-Package | TO-225AA |
Configuration | Single |
Power-Max | 40W |
Transistor-Type | NPN - Darlington |
Electric current collectors | 4A |
Voltage-Collector-Emitter-Breakdown-Max | 100V |
DC-Current-Gain-hFE-Min-Ic-Vce | 750 @ 1.5A, 3V |
Vce saturation | 2.5V @ 30mA, 1.5A |
Current-Collector-Cutoff-Max | 500μA |
Frequency-Transition | - |
Maximum Operating Temperature | + 150 C |
Operating temperature range | - 55 C |
Collector-Emitter-Voltage-VCEO-Max | 100 V |
Transistor-Polarity | NPN |
Collector-Base-Voltage-VCBO | 100 V |
Emitter-Base-Voltage-VEBO | 5 V |
Maximum-DC-Collector-Current | 4 A |
DC-Collector-Base-Gain-hfe-Min | 750 |
Maximum-Collector-Cut-off-Current | 200 uA |
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