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BD681G Darlington Transistors 4A 100V Bipolar Power NPN
  • BD681G Darlington Transistors 4A 100V Bipolar Power NPN

BD681G Darlington Transistors 4A 100V Bipolar Power NPN

Place of Origin Call
Brand Name onsemi
Certification ROHS
Model Number BD681G
Product Details
Product Name:
BD681G
Condition:
Original 100%
Installation Methodpe:
BJT Single 100 V + 150 C 4 A Through Hole TO-225AA, TO-126-3 BD681 NPN
Package:
TO-225AA, TO-126-3
Voltage - Supply:
International Standard
Max. Reverse Current:
International Standard
Application:
Transistors (BJT) - Single
Product Description

                                                                  BD681G Darlington Transistors 4A 100V Bipolar Power NPN 0BD681G Datasheet
Product Details

Description: The BD681G is a NPN Darlington transistor with a maximum collector cut-off current of 200 uA. It is packaged in a TO-225AA through hole mounting style and has a maximum power rating of 40W. It has a minimum DC current gain hFE of 750 @ 1.5A, 3V and a transistor polarity of NPN.

Features:
• NPN Darlington configuration
• Maximum collector cut-off current of 200 uA
• Packaged in a TO-225AA through hole mounting style
• Maximum power rating of 40W
• Minimum DC current gain hFE of 750 @ 1.5A, 3V
• Transistor polarity of NPN

Applications:
The BD681G is suitable for use in a variety of applications such as audio amplifiers, power switching circuits, and motor control circuits. It can also be used in automotive and industrial applications.

Specifications

 

Attribute Attribute Value
Manufacturer   onsemi
Product Category   Transistors (BJT) - Single
Series   BD681
Packaging    Bulk
Mounting-Style   Through Hole
Package-Case   TO-225AA, TO-126-3
Mounting-Type   Through Hole
Supplier-Device-Package   TO-225AA
Configuration   Single
Power-Max   40W
Transistor-Type   NPN - Darlington
Electric current collectors   4A
Voltage-Collector-Emitter-Breakdown-Max    100V
DC-Current-Gain-hFE-Min-Ic-Vce    750 @ 1.5A, 3V
Vce saturation    2.5V @ 30mA, 1.5A
Current-Collector-Cutoff-Max    500μA
Frequency-Transition    -
Maximum Operating Temperature    + 150 C
Operating temperature range    - 55 C
Collector-Emitter-Voltage-VCEO-Max   100 V
Transistor-Polarity   NPN
Collector-Base-Voltage-VCBO    100 V
Emitter-Base-Voltage-VEBO    5 V
Maximum-DC-Collector-Current    4 A
DC-Collector-Base-Gain-hfe-Min   750
Maximum-Collector-Cut-off-Current    200 uA
 

 

Descriptions

Bipolar (BJT) Transistor NPN - Darlington 100V 4A 40W Through Hole TO-225AA
Trans Darlington NPN 100V 4A 40000mW 3-Pin(3+Tab) TO-225 Box
Darlington Transistors 4A 100V Bipolar Power NPN

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A: We are original manufacturer OF Integrated Circuit Chip . We can do OEM/ODM business.
Q: How long is your delivery time?
A: Group buying delivery time: 30-60 days; General delivery time: 20 days.
Q: What is your terms of payment?
A: T/T 30% as deposit, and 70% before delivery.
Q: How to buy your products?
A: You can buy the products from our company directly.Normally the procedure is sign the contract, payment by T/T,Contact the shipping company to delivery the goods to your country.
Q: What is the warranty ?
A: The free warranty is one year from the day of Commissioning qualified.If there is any fault for our products within the free warranty period, we will repair it and change the fault assembly for free.

 
 

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