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MT29F128G08AMCABH2-10ITZ:A Memory IC SLC NAND Flash Parallel/Serial 3.3V 128G-bit 16G x 8 100-Pin TBGA
  • MT29F128G08AMCABH2-10ITZ:A Memory IC SLC NAND Flash Parallel/Serial 3.3V 128G-bit 16G x 8 100-Pin TBGA

MT29F128G08AMCABH2-10ITZ:A Memory IC SLC NAND Flash Parallel/Serial 3.3V 128G-bit 16G x 8 100-Pin TBGA

Place of Origin Call
Brand Name Micron Technology Inc.
Certification ROHS
Model Number MT29F128G08AMCABH2-10ITZ:A
Product Details
Product Name:
MT29F128G08AMCABH2-10ITZ:A
Condition:
Original 100%
Installation Methodpe:
SLC NAND Flash Parallel/Serial 3.3V 128G-bit
Package:
16G X 8 100-Pin TBGA
Voltage - Supply:
International Standard
Max. Reverse Current:
International Standard
Application:
Memory IC
Product Description

 

                                                                            MT29F128G08AMCABH2-10ITZ:A Memory IC SLC NAND Flash Parallel/Serial 3.3V 128G-bit 16G x 8 100-Pin TBGA 0MT29F128G08AMCABH2-10ITZ:A Datasheet

General Description

Micron NAND Flash devices include an asynchronous data interface for high-perform ance I/O operations. These devices use a highly multiplexed 8-bit bus (DQx) to transfer commands,address, and data. There are five control signals used to implement the asyn chronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status (R/B#).

 

Features

• Open NAND Flash Interface (ONFI) 2.2-compliant1
• Multiple-level cell (MLC) technology
• Organization
– Page size x8: 8640 bytes (8192 + 448 bytes)
– Block size: 256 pages (2048K + 112K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 64Gb: 4096 blocks;
128Gb: 8192 blocks;
256Gb: 16,384 blocks;
512Gb: 32,786 blocks
• Synchronous I/O performance
– Up to synchronous timing mode 5
– Clock rate: 10ns (DDR)
– Read/write throughput per pin: 200 MT/s
• Asynchronous I/O performance
– Up to asynchronous timing mode 5

tRC/tWC: 20ns (MIN)
• Array performance
– Read page: 50µs (MAX)
– Program page: 1300µs (TYP)
– Erase block: 3ms (TYP)
• Operating Voltage Range
– VCC: 2.7–3.6V
– VCCQ: 1.7–1.95V, 2.7–3.6V
• Command set: ONFI NAND Flash Protocol
• Advanced Command Set
– Program cache
– Read cache sequential
– Read cache random
– One-time programmable (OTP) mode
– Multi-plane commands
– Multi-LUN operations
– Read unique ID
– Copyback
• First block (block address 00h) is valid when shipped
from factory. For minimum required ECC, see
Error Management (page 109).
• RESET (FFh) required as first command after power
on
• Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Data strobe (DQS) signals provide a hardware method
for synchronizing data DQ in the synchronous
interface
• Copyback operations supported within the plane
from which data is read
• Quality and reliability
– Data retention: 10 years
– Endurance: 5000 PROGRAM/ERASE cycles
• Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
• Package
– 52-pad LGA
– 48-pin TSOP
– 100-ball BGA

 

Attribute Attribute Value
Manufacturer Micron Technology Inc.
Product Category Memory ICs
Lifecycle-Status Production (Last Updated
Mount Surface Mount
Number-of-Pins 100
Address-Bus-Width  34 b
Density 128 Gb
Interface Parallel, Serial
Max-Operating-Temperature 85 °C
Max-Supply-Voltage  3.6 V
Memory-Size 14.9 GB
Memory-Type  FLASH, NAND
Min-Operating-Temperature -40 °C
Min-Supply-Voltage  2.7 V
Nominal-Supply-Current 50 mA
Nominal-Supply-Voltage-DC 3.3 V
Operating-Supply-Voltage  3.3 V
Packaging  Bulk
Sync-Async  Asynchronous
Word-Size  8 b
RoHS Compliant
 

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Q: How long is your delivery time?
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Q: What is the warranty ?
A: The free warranty is one year from the day of Commissioning qualified.If there is any fault for our products within the free warranty period, we will repair it and change the fault assembly for free.
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