PBSS5350Z Series 50 V 3 A Surface Mount PNP Low VCEsat Transistor - SOT-223
PNP low VCEsat transistor in a SOT223 plastic package.
NPN complement: PBSS4350Z.
• Low collector-emitter saturation voltage
• High collector current capability: IC and ICM
• High collector current gain (hFE) at high IC
• Higher efficiency leading to less heat generation
• Reduced PCB area requirements compared to DPAK.
• Power management
– DC/DC converters
– Supply line switching
– Battery charger
– Linear voltage regulation (LDO).
• Peripheral drivers
– Driver in low supply voltage applications, e.g. lamps,
LEDs
– Inductive load driver, e.g. relays, buzzers, motors.
Attribute | Attribute Value |
---|---|
Manufacturer | Nexperia |
Product Category | Transistors (BJT) - Single |
Lifecycle-Status | Production (Last Updated |
Manufacturer-Lifecycle-Status | RELEASED FOR SUPPLY (Last Updated |
Case-Package | SC |
Contact-Plating | Tin |
Mount | Surface Mount |
Number-of-Pins | 4 |
Collector-Base-Voltage-VCBO | 60 V |
Collector-Emitter-Breakdown-Voltage | 50 V |
Collector-Emitter-Voltage-VCEO | 50 V |
Element-Configuration | Single |
Emitter-Base-Voltage-VEBO | 6 V |
Frequency | 100 MHz |
Gain-Bandwidth-Product | 100 MHz |
Max-Breakdown-Voltage | 50 V |
Max-Collector-Current | 3 A |
Max-Frequency | 100 MHz |
Max-Operating-Temperature | 150 °C |
Max-Power-Dissipation | 2 W |
Min-Operating-Temperature | -65 °C |
Number-of-Elements | 1 |
Packaging | Cut Tape (CT) |
Polarity | PNP |
Power-Dissipation | 2 W |
Schedule-B | 8541290080|8541290080|8541290080|8541290080|8541290080 |
Transition-Frequency | 100 MHz |
Lead-Free | Lead Free |
Radiation-Hardening | No |
REACH-SVHC | No SVHC |
RoHS | Compliant |
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