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Si9410DY-T1-GE3 Power Field-Effect Transistor 7A I(D) 30V 0.03ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor
  • Si9410DY-T1-GE3 Power Field-Effect Transistor 7A I(D) 30V 0.03ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor

Si9410DY-T1-GE3 Power Field-Effect Transistor 7A I(D) 30V 0.03ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor

Place of Origin Call
Brand Name Vishay/NXP
Certification ROHS
Model Number Si9410DY
Product Details
Product Name:
Si9410DY
Condition:
Original 100%
Mounting Type:
Power Field-Effect
Voltage - Supply:
Standard
Max. Reverse Current:
Standard
Application:
Transistor
Product Description

                                                                                 Si9410DY-T1-GE3 Power Field-Effect Transistor 7A I(D) 30V 0.03ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor 0Si9410DY-T1-GE3 Datasheet

Attribute Attribute Value
Manufacturer Infineon
Product Category FETs - Single
Lifecycle-Status NRND (Last Updated
Case-Package SO
Contact-Plating  Tin
Mount Surface Mount
Number-of-Pins 8
Continuous-Drain-Current-ID 10 A
Current-Rating  10 A
Drain-to-Source-Breakdown-Voltage 30 V
Drain-to-Source-Resistance 20 mΩ
Drain-to-Source-Voltage-Vdss 30 V
Dual-Supply-Voltage  30 V
Element-Configuration  Single
Fall-Time  44 ns
Gate-to-Source-Voltage-Vgs 20 V
Input-Capacitance  1.585 nF
Max-Junction-Temperature-Tj 150 °C
Max-Operating-Temperature 150 °C
Max-Power-Dissipation 2.5 W
Min-Operating-Temperature -55 °C
Nominal-Vgs 1 V
Number-of-Elements 1
On-State-Resistance 13.5 mΩ
Package-Quantity 3800
Packaging  Tape & Reel
Power-Dissipation  2.5 W
Rds-On-Max 13.5 mΩ
Resistance 13.5 mΩ
Rise-Time  7.7 ns
Schedule-B 8541290080
Termination  SMD/SMT
Threshold-Voltage  1 V
Turn-Off-Delay-Time 38 ns
Turn-On-Delay-Time 11 ns
Voltage-Rating-DC 30 V
Height 1.4986 mm
Length 4.9784 mm
Width 3.9878 mm
Lead-Free  Contains Lead, Lead Free
Radiation-Hardening  No
REACH-SVHC No SVHC
RoHS  Compliant

 

 

 

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