STP80NF70 Datasheet
Product Details
The STP80NF70 is a N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process. It has specifically been designed to minimize input capacitance and gate charge. The device is therefore suitable in advanced high-efficiency switching applications.
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Switching applications
Specifications
Attribute | Attribute Value |
---|---|
Manufacturer | STMicroelectronics |
Product Category | FETs - Single |
Series | N-channel STripFET |
Packaging | Tube |
Unit-Weight | 0.011640 oz |
Mounting-Style | Through Hole |
Package-Case | TO-220-3 |
Technology | Si |
Number-of-Channels | 1 Channel |
Configuration | Single |
Transistor-Type | 1 N-Channel |
Pd-Power-Dissipation | 190 W |
Maximum Operating Temperature | + 175 C |
Operating temperature range | - 55 C |
Fall-Time | 75 ns |
Rise-Time | 60 ns |
Vgs-Gate-Source-Voltage | 20 V |
ID (drain current) | 98 A |
Vds-Drain-Source-Breakdown-Voltage | 68 V |
Vgs-th-Gate-Source-Threshold-Voltage | 4 V |
Rds-On-Drain-Source-Resistance | 9.8 mOhms |
Transistor-Polarity | N-Channel |
Typical-Turn-Off-Delay-Time | 90 ns |
Turn-On Delay Time | 17 ns |
Qg-Gate-Charge | 75 nC |
Transconductance | 60 S |
Channel-Mode | Enhancement |
Descriptions
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